Low-Energy Electron Irradiation of NAND Flash Memories

Data on NAND Flash memories exposed to electrons with energies ranging from 20 keV to 100 keV are presented. When the memories are exposed to electrons below 100 keV, the total-dose induced data corruption is significantly greater than when tested to the same total dose in a Co-60 source due to dose enhancement effects. In addition, even in an extremely radiation soft NAND flash, no electron-induced single-event upsets were observed in this work.