Chemical vapor deposition of titanium dioxide thin film and its properties

The dielectric material used in microelectric industry is mainly SiO2. Because of its excellent and reproducible interface properties, thermal oxide was applied to both active and passive components of the devices. However, as more complex semiconductor devices and circuits were developed, additional requirements were placed on the dielectric layer system. In certain cases, the thermal oxide by itself was not sufficient. Therefore, in order to satisfy various purposes, new dielectric material thin films were developed. Si3N4 and Al2O3 are the two most commonly used among the many others. TiO2 offers some distinct advantages due to its high dielectric constant. Several known techniques were used for forming the thin TiO2 films such as CVD, anodization, oxidation, radio frequency sputtering, and liquid and vacuum deposition. Among those processes, CVD is proved to be the most versatile, simple, and reliable process.