Electrical modeling of carbon nanotube based through-silicon vias for three-dimensional ICs

In this work, through-silicon vias (TSV) filled with carbon nanotube (CNT) bundle are investigated based on the equivalent circuit model. The concept of effective complex conductivity is employed for accurately characterizing the impacts of CNT kinetic inductance. The high frequency electrical performance of CNT based TSVs is captured and analyzed. Finally, the TSVs filled with a composite of Cu and CNT are discussed.