Impact of nonlinear MOS capacitance effect on transient analysis of interposer through-silicon vias

In this paper, the equivalent circuit model of a pair of TSVs in a passive interposer base is developed, with the nonlinear MOS capacitance effect treated appropriately. Based on the circuit model, the transient analysis of the interposer TSVs is carried out. The results would be helpful for the design and practical applications of interposer-based 2.5-D IC systems.