Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

The typical behavior of the recombination current in fully-depleted silicon-on-insulator (SOI) PIN diodes including gate-all-around and double-gate configurations is investigated. An excess forward current is measured when carrier recombination occurs in the whole body of the device. A novel "recombination-box" model is proposed, validated by two-dimensional (2-D) simulation, and used to extract the carrier recombination rate. The physical origin of carrier recombination in fully-depleted structures is discussed in terms of volume and/or surface contributions.