A new "critical-current at linear-threshold" method for direct extraction of deep-submicron MOSFET effective channel length

A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the "critical-current at linear-threshold" ("I/sub crit/@V/sub t0/") based on the maximum-g/sub m/ definition. With a simple calibration of the channel sheet resistance from the long-channel I/sub crit/ data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of I/sub crit/@V/sub t0/. Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling.