An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

An 0.18-/spl mu/m CMOS technology with multi-V/sub th/s for mixed high-speed digital and RF-analog applications has been developed. The V/sub th/s of MOSFETs for digital circuits are 0.4 V for NMOS and -0.4 V for PMOS, respectively. In addition, there are n-MOSFET's with zero-volt-V/sub th/ for RF analog circuits. The zero-volt-V/sub th/ MOSFETs were made by using undoped epitaxial layer for the channel regions. Though the epitaxial film was grown by reduced pressure chemical vapor deposition (RP-CVD) at 750/spl deg/C, the film quality is as good as the bulk silicon because high pre-heating temperature (940/spl deg/C for 30 s) is used in H/sub 2/ atmosphere before the epitaxial growth. The epitaxial channel MOSFET shows higher peak g/sub m/ and f/sub T/ values than those of bulk cases. Furthermore, the g/sub m/ and f/sub T/ values of the epitaxial channel MOSFET show significantly improved performances under the lower supply voltage compared with those of bulk. This is very important for RF analog application for low supply voltage. The undoped-epitaxial-channel MOSFETs with zero-V/sub th/ will become a key to realize high-performance and low-power CMOS devices for mixed digital and RF-analog applications.