Temperature dependence of porous silicon resistance

Porous silicon resistors have been fabricated and the resistance at temperatures between 100 K and 400K has been measured in order to investigate the relationship between the temperature dependence of porous silicon resistance and the anodization process. Porous silicon layer was formed in the n/sup +/ region between contacts by anodization in 15 % aqueous HF solution. Anodization time was fixed at 5 minutes and anodization voltage varied. The temperature dependence of the porous silicon resistance varied widely with the anodization voltage. A model explaining the experimental results has been proposed in this paper.