Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

Electrically detected magnetic resonance (EDMR) measurements of 4H-SiC/SiO
₂
metal-oxide-semiconductor field-effect transistors (MOSFETs) show large changes in the EDMR induced by gamma irradiation, indicating substantial changes in interface structure but, surprisingly, no generation of interface dangling bond defects. Our results indicate substantial fundamental atomic scale differences between radiation responses of Si/SiO
₂
based MOSFETs and SiC/SiO
₂
based MOSFETs.