A galvanically isolated gate driver with low coupling capacitance for medium voltage SiC MOSFETs

This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A low common mode coupling capacity of 1 pF and good electrical insulation of the gate driver power supply are achieved by using a current-loop AC-bus power supply. The power semiconductor is protected against unintentional self-turn-on by a low resistance gate path that is active while the gate driver is not powered.