Abstract:
This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A low common mode coupling capacity of 1 pF and good electrical insulation ...Show MoreMetadata
Abstract:
This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A low common mode coupling capacity of 1 pF and good electrical insulation of the gate driver power supply are achieved by using a current-loop AC-bus power supply. The power semiconductor is protected against unintentional self-turn-on by a low resistance gate path that is active while the gate driver is not powered.
Published in: 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)
Date of Conference: 05-09 September 2016
Date Added to IEEE Xplore: 27 October 2016
ISBN Information:
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