A study of interface states of directly bonded silicon-on-insulator (SOI) structures

In this paper, experimental data on the temperature-dependent transient photoconductivity obtained on bonded SOI structures are presented. It is shown that, during the bonding process at the interface of the sample, electrically active states appear. The values of activation energies and capture cross-sections of charge carriers at the interface are similar to those at the interface of silicon and thermal oxide.