A simple physical extraction method for R/sub D/-R/sub S/ of asymmetric MOSFETs

MOSFETs with different drain and source series resistance, R/sub D/ and R/sub S/, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of R/sub D/-R/sub S/. This paper presents the concept and the results of a new, simple, and physical extraction technique to determine R/sub D/-R/sub S/ purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling.