High-density ultra-low R/sub dson/ 30 volt N-channel trench FETs for DC/DC converter applications

This paper presents a new high-density trench MOSFET design with ultra-low R/sub dson/ for DC/DC converter applications. A benchmark low specific on-resistance of 26 m/spl Omega/.mm/sup 2/ at 4.5 V gate bias is reported. A remote contact feature is utilized to obtain such high channel density and corresponding channel conductance. In-circuit efficiency as high as 89% is obtained, which is the best obtained in the industry to date.