Abstract:
In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the...Show MoreMetadata
Abstract:
In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the N and P pillars on the static and dynamic characteristics of the device is studied in detail. Simulations predict that this device is highly sensitive to charge imbalance if designed for optimum on-resistance. The breakdown voltage (BV) and E/sub off/ sensitivity can be reduced considerably by degrading the specific on-resistance R/sub on,sp/. The physics of the static and dynamic behaviour of this device under charge imbalance is explained with the help of numerical simulations.
Published in: 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
Date of Conference: 26-28 May 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5290-4
Print ISSN: 1063-6854
