High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique

Light ournut Dower over 1OOmW is obtained even at 60°C from each element of a four-beam laser wrth a mple*quantum well active layer. This laser has a buried-ridge, inner-stripe structure formed by a newly developed etching stop technique, which realizes reproducible fabrication of a multi-beam laser with excellent and uniform characteristics For an individually addressable laser array for parallel data processing.