Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

We report the determination of the Auger recombination coefficient in unstrained and strained InGaAs/InGaAsP/InP SC-MQW laser structures. The weak temperature dependence of the Auger coefficient indicates the dominance of the phonon-assisted CHSH Auger process. For T = 300K and L/sub z/ = 100/spl Aring/ we find C = 1.0 - 10/sup -28/crn/sup 6/s/sup -1/, independent of strain.