Interconnect and MOS transistor degradation at high current densities

New MOS transistor and metal contact/interconnect degradation mechanisms at high current densities (HJ) and low voltages (<1 V) and their correlation are discussed. The new degradation pathway is started by metal-hydrogen bond breaking at the metal/silicon contact or along the metal interconnect lines and then followed by hydrogen diffusion to the SiO/sub 2/-Si interface, where it can generate interface traps by a hydrogen reduction reaction. Microscopic model and kinetic data on the current density and temperature dependence of the MOST and interconnect degradation are discussed.