A new physical model for NVM data-retention time-to-failure

A new physical model for nonvolatile memory (NVM) data-retention time-to-failure is proposed. In this model, retention-time t/sub r/, namely log(t/sub r/), varies linearly with temperature T rather than with 1/T, as commonly assumed. The main consequence of the T-model is a drastic reduction of the extrapolated time-to-failure in highly temperature accelerated life-testing. Extensive experimental studies strongly support the T-model. The physical consistency of the T-model and its literature-data unifying character are demonstrated.