Surface morphology and I-V characteristics of single-crystal, polycrystalline, and amorphous silicon FEA's

This letter reports the surface morphology and current-voltage (I-V) characteristics of single-crystal silicon (c-Si), polycrystalline silicon (poly-Si), and amorphous silicon (a-Si) field emitter arrays (FEAs). As-deposited a-Si film has a smoother surface than poly-Si film. The surface morphology of the a-Si remains smooth even after phosphorus doping and oxidation at 950/spl deg/C to be improved in emission characteristics, i.e., smaller anode current deviation among arrays smaller gate current, and higher failure voltage than those of poly-Si FEAs. Such improved characteristics can be explained by the smooth surface morphology which is kept during doping and oxidation. The surface roughness and emission characteristics of a-Si FEAs are comparable to those of c-Si FEAs.