Modeling electrostatic doping and series resistance in graphene-FETs

We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self-consistent Monte Carlo loop is proposed and verified against the widely employed method based on look-up tables.