Simulation of silicon-dot-based single-electron memory devices

Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific wave functions on the dots and in the electrical contacts. The charge state of the dots was evaluated using the master equation approach. The simulation model was verified by a comparison of simulated and measured charge state life times in a prototype of a single-electron memory device.