Investigation of scattering mechanism in nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver

We investigate the scattering mechanism in ultrashort double gate In
_0.53
Ga
_0.47
As nMOSFETs by deterministically solving Boltzmann transport equation (BTE). The intra-valley acoustic phonon scattering, optical phonon scattering, intervalley optical scattering, polar optical scattering, and surface roughness (SR) scattering are considered. The impacts of scattering on the performance of device under high/low biases are compared. Results show that the ballistic ratio (Iscat/Iball) decreases from 96.8% to 94.5% when the drain bias increases from 0.05V to 0.6V, which is mainly caused by the inter-valley scatterings.