TCAD proven compact modelling re-centering technology for early 0.x PDKs

Well-calibrated predictive TCAD simulations are employed to generate target data for compact models for better pre-V1.0 PDK development. A reliable re-centering technology has been developed which can accurately migrate the global and local variability and the corresponding corners. FinFETs calibrated to published data by Intel at the 14nm technology node are employed as test-bed devices.