Advanced physical modeling of SiOx resistive random access memories

We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiO
_x
) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiO
_x
layer, and demonstrate the impact of self-heating effects and the initial vacancy distributions on switching. We also highlight the necessity of using 3D physical modelling to predict correctly the switching behavior. The simulation framework is useful for exploring the little-known physics of SiO
_x
RRAMs and RRAM devices in general. This proves useful in achieving efficient device and circuit designs, in terms of performance, variability and reliability.