Silicon Oxynitride Formation In Nitrous Oxide (N/sub 2/O): The Role Of Nitric Oxide (NO)

We present data showing, for the first time, the effect of N20 flow rate on the thickness and interfacial nitrogen concentration of oxynitride films grown in a conventional furnace at one atmosphere. Our analysis, based on the concentration of nitric oxide (NO), can explain these observations as well as the variation in the published data on the kinetics of film growth. This understanding should facilitate the application of these films as tunnel dielectrics and gate dielectrics to improve device reliability (1,2).