A Novel Stacked Capacitor With Porous-Si Electrodes For High Density DRAMs

In the present work, we have developed a new technique, in which a phosphorous (P) doped poly-Si is changed into a porous-Si through H3PO4 solution treatment. By using this technique, surface of stacked electrodes can be entirely covered with micro cavities, and their surface area are effectively increased. 3.4 times storage capacitance can be obtained with the micro cavity covered HSG-Si simple structured electrode.