The Effects Of Hot Carriers Generation On The Operation Of Neighboring Devices And Circuits

It is well known that electron-hole pairs are generated by impact ionization when a MOSFET is operated in the saturation region, and the generation of photons under a high drain field conditions has also been reported[1]. The influence of the hot carriers on the reliability of devices has been studied extensively. This paper is devoted to examining the detrimental effects of excess majority carriers and photons on the operation of neighboring pn junctions, bipolar transistors, MOS transistors, and circuits.