A CMOS-compatible boosted transistor having >2× drive current and low leakage current

A novel boosted MOS structure with buried n-well current booster providing >2× higher drive current and low off current is experimentally demonstrated on 28 nm bulk silicon technology. TCAD analysis is performed to investigate the boosting mechanism as well as to demonstrate scalability to 7 nm FinFET technology. Constant bias applied to the booster terminal results in a gate voltage controlled body current source intrinsic vertical BJT that only turns on at high gate voltage. The body current then amplifies lateral BJT current. The inherent vertical and lateral BJTs are automatically turned off at low gate voltage, maintaining low off-state current.