A wideband monolithically integrated photonic receiver in 0.25-µm SiGe:C BiCMOS technology

This work presents a 54 Gb/s monolithically integrated silicon photonics receiver (Rx). A germanium photodiode (Ge-PD) is monolithically integrated with a transimpedance amplifier (TIA) and low frequency feedback loop to compensate for the DC input overload current. Bandwidth enhancement techniques are used to extend the bandwidth compared to previously published monolithically integrated receivers. Implemented in a 0.25 μm SiGe:C BiCMOS electronic/photonic integrated circuit (EPIC) technology, the Rx operates at λ=1.55 μm, achieves an optical/electrical (O/E) bandwidth of 47GHz with only ±5ps group delay variation and a sensitivity of 0.2dBm for 4.5×10
^-11
BER at 40 Gb/s and 0.97dBm for 1.05×10
^-6
BER at 54 Gb/s. It dissipates 73mW of power, while occupying 1.6mm
²
of area. To the best of the author's knowledge, this work presents the state-of-the-art bandwidth and bit rate in monolithically integrated photonic receivers.