Low loss packaging method for Si-based chips occupying waveguide probe coupling structure

A method to enhance transition performance between millimeter wave & terahertz Si-based chip and waveguide by employing improved waveguide probe coupling structure is proposed in this paper. Multi-section impedance matching structure is employed in the E-plane probe to obtain good matching/low loss performance for waveguide packaging. In order to eliminate severely higher order dielectric filled waveguide mode excited below the metal layer one in the lossy silicon substrate, a simple but effective shielding method is proposed to prevent the higher order mode loss, which can decrease the signal energy injecting into lossy substrate to improve the insertion loss performance considerably. Finally, an W-band Si-based amplifier is demonstrated, and measured results show that good agreements between the measured and simulated results are achieved.