Effect of scaling of device parameters on the performance of uncoupled mode space NEGF transport model based silicon nanowire transistor

The paper reports the effect of scaling of device parameters like gate work function, nanowire diameter, gate oxide thickness and gate length on the electrical behavior of silicon nanowire field effect transistor based on uncoupled mode space NEGF transport model. The underlying physics behind the uncoupled mode space approach has been touched upon in this paper. By way of simulating several configurations of the nanowire transistor and observing the corresponding variations in the device behavior, the dependence of drain current on the scaled device parameters has been observed to arrive at optimum values of gate work function, diameter, gate oxide thickness and gate length out of all the configurations simulated that would enable the nanowire transistor to demonstrate higher drive current, lower subthreshold current thereby leading to lower power dissipation with minimal area and enhanced circuit speed owing to ballistic electron transport.