Theoretical and numerical study on bulge testing of ground wafer to characterize mechanical properties and residual stress

Backside grinding is the most commonly used technique in silicon wafer thinning. The grinding damage may cause degradation of mechanical property and induce residual stress. In this paper, bugle test is proposed to apply to ground wafer. Before the experimental work starts, the theoretical model needs to be built. A numerical model is also adopted to verify the applicability of the theoretical model, and the results turns out the theoretical model only works for films with thickness to radius (t/r) larger than 1/20. With the existence of residual stress, the accuracy needs to be improved by modifying the theoretical model or introducing new iterative algorism.