An Ultra-Short Channel Monolayer MoS2 FET Defined By the Curvature of a Thin Nanowire

In this letter, we demonstrate the first top-gated 10-nm scale field-effect transistor with chemical-vapor-deposition synthesized monolayer MoS
₂
as the channel material. Ultra-thin metallic Co
₂
Si nanowires are employed to gate the MoS
₂
channel and thereby define the device feature size-gate/channel length, as well as to serve as a self-aligned mask for source/drain metallization. This process not only avoids using the high-cost and low-yield electron beam lithography to define the gate/channel length, but also enables a top-gate structure with ultrathin gate dielectric. The latter is required to suppress short channel effects, but difficult to achieve with conventional deposition techniques on 2D layered semiconductors. Moreover, low OFF-current of 10 pA/μm and high ON/OFF current ratio over six orders are achieved, which makes this device quite promising for next-generation CMOS technology.