A high responsivity SnO2 hollow nanospheres based ultraviolet photodetector

Hollow spherical nano structures have shown great potential in the field of optoelectronics. As a wide band gap material, SnO
₂
has electrical and optical properties well suited for its use in fabrication of ultraviolet photodetectors. This paper presents the synthesis and characterization of SnO
₂
hollow nanospheres. The spheres are used as active material to fabricate a UV photodetector. The electrical characteristics of the device have also been presented. The fabricated detector exhibits a peak UV responsivity of 2680 A/W and high external quantum efficiency of 9.8 × 105%. This paper shows SnO
₂
hollow nanospheres as a promising material for fabricating high sensitivity ultraviolet photodetectors.