High-gain 60-GHz on-chip PIFA using IPD technology

A first high-gain 60-GHz PIFA implemented with a silicon substrate Integrated Passive Device (IPD) technology is presented in the paper. The PIFA which was used with L-shape ground structure could change the radiation pattern and enhance the antenna gain. Simulation and measurement regarding antenna reflection coefficient are conducted for design validation. The measured results show that the antenna can operate in 60-GHz band, and the impedance bandwidth with |S
₁₁
| less than -10 dB is 11%. The measured gain is 5 dBi at 60 GHz. The total chip size is 1.05 × 1.25 mm
²
. The proposed design is well suited for System-in-Package 60-GHz radio front-ends.