Characterization and modeling of NBTI permanent and recoverable components variability

In this paper we use a statistical analysis of NBTI stress and recoverable components measured on Pfet devices issued from ST Microelectronics 28nm FDSOI technology. NBTI degradation and recovery resulting from AC and DC stress are measured at μs time scale. Statistical analysis of the permanent and recoverable components are performed separately. A Dual Defect Centric Model (DDCM) accounting for these two components is also proposed.