Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators

We study the hysteresis and bias-temperature instabilities in single-layer MoS
₂
FETs with SiO
₂
and hBN gate insulators and attempt to capture the correlation between these phenomena. In agreement with previous literature reports, our results show that the use of hBN as a gate insulator reduces the hysteresis. Furthermore, we show that the impact of the bias-temperature instabilities is weaker for MoS
₂
/hBN transistors. However, at higher temperature the reliability of MoS
₂
/hBN FETs is reduced due to thermally activated charge trapping.