Systematic transient characterization of graphene interconnects for on-chip ESD protection

Both novel ESD structures and robust ESD interconnects are critical to on-chip ESD protection designs [1-3], which are characterized by transient transmission line pulse (TLP) testing for human body model (HBM). Compared to metal lines (Al & Cu), graphene ribbons (GR) has great potential as robust ESD interconnects due to its excellent thermal and mechanical properties. We report the first systematic characterization and statistical analysis of CVD grown-graphene by transient TLP testing with varying pulse rise time (tr) and duration (td) at different temperature. The statistics suggest that GR wires are potential candidates for ESD interconnects for future on-chip ESD protection designs.