High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

In
0.53
Ga
0.47
As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., I
on
/I
off
∼10
⁵
, DIBL=48 mV/V, g
m
=1510 µS/µm, and I
on
=301 µA/µm at V
ds
=0.5V with L
g
=120 nm device). The extrinsic field effect mobility of 1731 cm
²
/V-s with EOT∼0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and I
on
when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an I
on
of 44.1 µA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In
0.53
Ga
0.47
As FinFETs to the best of our knowledge.