Performance analysis of symmetric High-k Spacer (SHS) Trigate SOI TFET

In this paper, an extensive analysis for the subthreshold swing (SS) and I
_OFF
current in Symmetric High-k Spacer (SHS) Trigate N-TFET (tunnel field effect transistor) is proposed. A TFET (tunnel field effect transistor) can able to achieve subthreshold swing less than 60 mV/decade at room temperature, which facilitates the device for low power applications. In N-TFET source doping has a significant effect on the 0N-current level; therefore tunneling takes place between the source and intrinsic region. In the TFET, ambipolar conduction is possible which leads to the reduction of I
_ON
current, Increase in the drain series resistance as well as process complexity. In this model, we are not considering the ambipolar conduction. So, the source and drain regions were doped with different concentrations. The proposed model has been explained by the transfer and output characteristics as well as energy band diagram with simulation results.