Impact of high K layer material on Analog/RF performance of forward and reversed Graded channel Gate Stack DG-MOSFETs

In this paper we have made a relative assessment of Graded channel Gate stack (GCGS) DG MOSFET structure for different high K materials by interchanging forward and reverse doping profile across the channel by using 2D Sentrausu TCAD simulator. This structure consist of gate stack (GS) engineering (high K), and non-uniformly channel engineering (GC) to overcome the short channel effects and improving the device performance. This novel device can be a substitute to the current devices for future high speed switching and low power circuit applications. It has the benefits of reducing leakage current, better breakdown voltage, reduced bipolar parasitic effects and improved frequency response. The given device must be explored with respect to different doping profile and high K materials to have better reliability and dependency before fabrication. Different analog and Rf performance parameters of the proposed device was studied with respect to different high K materials for better understanding and future application. The 2D Sentrausu TCAD simulator using drift-diffusion model was used to simulate the developed structure along with proper validation. The result indicates that the variation of doping profile and high K oxide materials have significant effects on the performance of the said device.