A novel hybrid doping based SOI MOSFET

In this paper, we propose a novel nano scale SOI MOSFET with hybrid doping. In the proposed device, the source of the transistor is conventionally doped while drain doping is controlled electrically by changing voltage level at an additional gate (SG) on one side of the main gate (MG). When a positive voltage at the side gate is applied, the device acts as a NMOS transistor. The hybrid doped NMOS is compared with a conventional SOI NMOS. As the drain is electrically induced, electrical field is reduced at drain junction. A 2D simulation study of the proposed device has been performed. The simulation study has shown that the proposed device has better short channel control as compared to the conventional SOI MOSFET.