Characterization of highly-doped GaN as a new material for plasmonic applications

We report on the optical properties of highly doped Gallium Nitride (GaN:Si) layers in regard to plasmonic applications. Samples with different carrier concentrations were grown by PA-MBE and characterized by spectroscopic ellipsometry. Functions for the isotropic and anisotropic complex refractive indices are presented and discussed in the context of the possible excitation of plasmonic states.