Performance of 7nm stress-engineered nFinFETs based on stressors consideration for different channel material

Selecting the material used as the device channel which connects the source to drain region is vital as it will affect the conductivity of the transistor. Recently, germanium was actively used as the diffusion material for source/drain and channel properties mainly for ρ type FinFET, however rarely in η type FinFET. This paper investigates the device performance of 7nm nFinFET for their various types of stressor: channel and source/drain stressor by employing germanium as diffusion materials which indicates the strain applied to the device investigated. It was observed that with the incorporation of germanium inside silicon channel (depending on the ratio of Si
_1-x
Ge
_x
) and reducing the diffused germanium inside source/drain region, the I
_d
-V
_g
characteristics seems to be better and shows enhanced performance. It was also observed that the drain current for nFinFET in linear mode can be increased up to 60% with the incorporation of germanium and by increasing the mole fraction of germanium inside source/drain region, the drain current can reduce up to 40% and 30% for silicon and silicon germanium channel respectively. In addition, with only 15%-30% of germanium present inside the source/drain region, the device seems to have a better performance with higher drain current.