Comparison of DC, fast I-V, and pulsed I-V measurement method in multi-layer WSe2 field effect transistors

Transfer characteristics of the WSe
₂
field effect transistors are measured by the dc, fast I-V, and pulsed I-V methods. In the dc measurement, large hysteresis is observed. In the fast I-V measurement, less hysteresis is obtained with a faster sweeping rate, however, the hysteresis is still not negligible. By applying the pulsed I-V method with short on time (~10
^-4
s), and long off time (~1 s), the hysteresis-free characteristics of WSe
₂
FETs are obtained, and noticeably enhanced mobility (~160 cm
²
/V·s) is observed.