Fabrication and characterisation of AlGaN/GaN MODFETs for microwave power applications

AlGaN/GaN MODFETs reveal a very large potential to be used as microwave power devices in future communication, navigation and military surveillance systems. A increasing number of companies and research institutes are currently engaged in GaN/AlGaN FET device research headed by US American groups. In this paper we discuss the potential and the challenge of MODFETs based on GaN/AlGaN with special emphasis on the actual status of GaN/AlGaN MODFET technology at Daimler-Chrysler.