Silicon carbide microwave MESFET research at DERA Malvern

Microwave devices fabricated in SiC offer huge benefits compared to conventional GaAs based devices, in particular offering enhanced power handling and higher voltage operation. Here we report on progress towards the establishment of a power MESFET process, including highly encouraging DC and S-parameter results from single finger devices, and initial results for multi-finger power devices. Simulations of the ultimate microwave power performance of wide bandgap FET devices are presented.