Analysis and modeling of GaN-based multi field plate Schottky power diodes

Lateral GaN-based Schottky diodes are promising for high-voltage, high frequency, low-loss power applications due to their low forward- and reverse charges resulting from the physical properties of the AlGaN/GaN-heterojunction. For GaN-Schottky diodes in the 600V/10A power range, reverse charges as low as 6nC can be achieved. The reverse current I
_RRM
does not exceed 150mA at a switch-off slope of 25A/μs and reverse voltage of 400V, for higher switching-speeds of 170A/μs an I
_RRM
of 510rmA is measured. This work focuses on compact modeling of non-linear capacitances of lateral, high-voltage Schottky diodes realized in a multi field plate design. All parameters for the model in forward and reverse direction are extracted from capacitance-voltage (C-V)- and IV-measurements presented in this work.