Field emission behaviors of B/LaB6 hierarchical heterojunction nanostructures

The B/LaB
₆
hierarchical heterojunction nanostructures have been successfully fabricated on Si substrate by CVD technique. The branch-like morphology may be beneficial to improving their field emission (FE) properties by increasing the aspect ratio or growth density of the emitters. The results show that the threshold field of the B/LaB
₆
branch-like nanoheterojunctions is 21.6 V/μm (@1 mA/cm
²
) and their maximum field current density can reach 4.8 mA/cm
²
(at 27.5 V/μm). It is suggested a novel Ohmic-contact LaB
₆
nanoheterojunction to promote their rapid applications in FE area in future.